ADVANCES IN THE STUDY OF PROPERTIES AND MECHANICS OF SEMICONDUCTOR QUANTUM DOT STRUCTURES[J]. Advances in Mechanics, 2007, 37(4): 481-495. doi: 10.6052/1000-0992-2007-4-J2006-182
Citation: ADVANCES IN THE STUDY OF PROPERTIES AND MECHANICS OF SEMICONDUCTOR QUANTUM DOT STRUCTURES[J]. Advances in Mechanics, 2007, 37(4): 481-495. doi: 10.6052/1000-0992-2007-4-J2006-182

ADVANCES IN THE STUDY OF PROPERTIES AND MECHANICS OF SEMICONDUCTOR QUANTUM DOT STRUCTURES

doi: 10.6052/1000-0992-2007-4-J2006-182
  • Received Date: 2006-12-25
  • Rev Recd Date: 2007-04-19
  • Publish Date: 2007-11-25
  • Considerable experimental and theoretical studies havebeen carried out in semiconductor quantum dots (QDs) in recent years, sincequantum-dot devices offer a bright prospect of improved electronic andoptical properties due to the zero-dimensional quantum confinement ofcarriers. The elastic field is essential for the analyses ofthe physical and mechanical properties of QDs. In this article, the elementsof the low-dimensional quantum confined systems, the physical properties andthe fabrication techniques of the QDs are reviewed systematically. Inparticular, the researches on mechanics of the semiconductor QDstructures, and the coupling between the elastic field and thephysical properties are discussed.

     

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